Abstract
The high temperature oxidation resistance of Ti–50Al can be improved by sputtering an Al film and subsequent interdiffusion treatment at 600 °C for 24 h in high vacuum. In these conditions, a TiAl 3 layer is formed on the surface, which exhibits good adhesion with Ti–50Al substrate and provides high oxidation resistance. Cyclic and isothermal oxidation tests show that the Ti–50Al with 3–5 μm Al film can dramatically reduce the oxidation at 900 °C in air, at which the parabolic oxidation rate constant K p of specimen with 5 μm Al film is only about 1/15,000 of that of bare Ti–50Al. XRD and SEM results indicate that the TiAl 3 layer can promote the formation of a protective Al 2O 3 scale on the surface as well as react with γ-TiAl to form TiAl 2 during the oxidation. Simultaneously, layers of Al 2O 3/TiAl 2/Al-enriched γ-TiAl/Ti–50Al are also formed on specimens. The TiAl 2 layer thickness will decrease gradually with increasing the oxidation time. After oxidation at 900 °C for 300 h, there is a clearly discontinuous thin layer of Ti 37Al 53O 10 compound observed in between Al 2O 3 and TiAl 2.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
