The importance of the n-base in p-n-p-n-like structures subjected to dV/dt ramps

Abstract

A simple yet thorough analysis of physical effects induced in p-n-p-n-like silicon structures by the high rate of the OFF-state forward anode voltage rise (dV/dt) is discussed. The importance of n-base parameters in shaping the faulty triggering of thyristors subjected to dV/dt ramps is clearly demonstrated. The main implications of the findings for thyristor physics and design are also outlined.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>