Abstract
A two-dimensional finite-difference analysis is used to simulate the current flow and charge distribution in undoped AlGaAs/GaAs MODFET structures called heterostructure insulated-gate field-effect transistors (HIGFETs). How an electron channel can be induced at the AlGaAs/GaAs interface when there is no doped supply layer is studied. The origins of the charge in this channel are studied by comparing its behavior in equilibrium with that when a current flows. By considering the different geometries of a Schottky gate and implanted source and drain contacts, the interrelationship between gate control and electron injection from the doped contact regions is shown and a graphic view of the origins of the interfacial charge in a HIGFET is given.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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