The Impacts of Cesl and STI Mechanical Stress Effect on Device Performance for UTBB FD-SOI MOSFET

Abstract

The effects of a stressor nitride oxide layer on device performance and reliability are investigated. Impact of tensile and compressive stress contact etch stop layer (CESL) and shallow trench isolation(STI) mechanical stress on performance and mobility enhancement of <110>/(100) Fully Depleted Sillicon On Insulator(FD-SOI) MOSFETs (ultrathin film, short length, metal-gate/high-K stack, thin BOX) were studied in detail. By thoroughly evaluating their impact on current, mobility, and threshold voltage, the performance gain of CESL is quantified at CMOS with mobility enhancement identified as the major source. It is also experimentally demonstrated that advantageous Length of Diffusion. In the Compress CESL(cCESL) strain , PMOS show 34% performance enhancement with LOD increase 0.1nm to 1um. On the ather hand, NMOS show 3.41%. In the Tensile CESL(tCESL) strain , NMOS show 11.72% performance enhancement with same LOD condition. On the ather hand , PMOS has changed 3.72%.