Abstract
An effect of stress distortion on the conduction band structure was derived by k.p method considering a second order perturbation. From k.p conduction band calculations, stress-induced band edge split and the change of effective mass are quantitatively evaluated. The physical reasons of warped subband structure and abnormal mobility enhancement by uniaxial stress are investigated. Variation rates of experimental electron mobility in the silicon n-channel metal-oxide-semiconductor field-effect-transistors under a [110] uniaxial stress as a function of channel direction is theoretically studied.
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