Abstract
The laser characteristics of 0.98 µm vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots (QDs) were studied in a broad temperature range. Devices demonstrated low internal optical losses, high differential efficiency and relatively small resistances due to the QD active region together with an optimal design of doped distributed Bragg reflectors. It is found that the temperature dependence of threshold current and differential efficiency depends not only on the temperature sensitivity of the active region, but also on the lineshape of the gain curve and spectral misalignment between the gain maximum and cavity mode. A simple method of estimation of gain-cavity detuning has been proposed.
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