Abstract
The current induced magnetization switching effect in a deep submicron pseudo-spin-valve (PSV) at low external magnetic field (EMF) is theoretically studied. Both the spin-dependent scattering at the interfaces and the relaxation of spin accumulation in the ferromagnetic layer is considered within a macroscopic phenomenological model based on the magnetic dynamic equation. Magnetization switching conditions and then the resistance-current curve of the PSV structure are calculated at different EMF. It is demonstrated that the hysteresis loop in the resistance-current curve shifts with the change of the EMF. All the simulation results are consistent with the experiments reported.
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