Abstract
This paper describes the impact of the distributed RC effect in the intrinsic base region on the modeling of the output noise spectral density of a bipolar junction transistor. Simplified expressions to convert the distributed noise models to an improved hybrid-π model with the new equivalent noise sources are proposed. The accuracy of the new model has been verified by circuit simulations. Based on the new model, a noise analysis is done. The simulation results are compared with one by the conventional model. From this, the sensitivity of the noise parameters to the distributed RC effect is studied.
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