Abstract
Power semiconductor switching devices play an important role in the performance of high power wind energy generation systems. The state-of-the-art device choices in the wind power application as reported in the industry include IGBT modules, IGBT press-pack and IGCT press-pack. Because of significant deviation in the packaging structure, electrical characteristics, as well as thermal impedance, these available power switching devices may have various thermal cycling behaviors, which will lead to converter solutions with very different cost, size and reliability performance. As a result, this paper aimed to investigate the thermal related characteristics of some important power switching devices. Their impact on the thermal cycling of a 10 MW three-level Neutral-Point-Clamped wind power converter is then evaluated under various operating conditions; the main focus will be on the grid connected inverter. It is concluded that the thermal performances of the 3L-NPC wind power converter can be significantly changed by the power device technology as well as their parallel configurations.
Highlights
The European Union has committed itself to source 20% of its energy from renewables by 2020 [1].As the most promising candidate, wind energy production integrated into the power grid is booming all over the World
Three-level Neutral-Point-Clamped wind power converter are evaluated under various operating conditions; the main focus will be on the grid connected inverter
When taking into account the extra auxiliary parts like drives, fans, heat sink, wires, etc., the Insulated Gate Bipolar Transistor (IGBT) module solution may result in much lower power density and higher component counts, which may not be preferable in the wind power application
Summary
The European Union has committed itself to source 20% of its energy from renewables by 2020 [1]. The dominant power switching device choices as reported in the wind power industrial application are based on module packaging Insulated Gate Bipolar Transistor (IGBT), press-pack packaging. The press-pack packaging technology improves the connection of chips by direct press-pack contacting, which leads to improved reliability (yet to be scientifically proven but known from industrial experience), higher power density (easier stacking for series connection) and better cooling capability with the disadvantage of higher cost compared to the module packaging devices. Press-pack IGCTs were introduced into the medium voltage converters in the 1990s and are already becoming state of the art in high power electric drives (e.g., for oil and gas application) but have not yet been significantly mass adopted in the wind turbine industry [6,7,8]. The impact of the three important power switching devices on the thermal cycling of a 10 MW three-level Neutral-Point-Clamped wind power converter are evaluated under various operating conditions; the main focus will be on the grid connected inverter
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