Abstract
Inthispaper, silicon nanowireJunctionlesstransistors, gateallaround, cylindricalMOSFETs with (four,three and two) metals gateis compared. The gate metals at the source end is with the highest work function called the control gate and the metals at the drain end is with the lowest work function.The gate length is 30 nm and the length of gate metals, are equal.Sio2 thickness of 1 nm, Hfo2 thickness of 3 nm and gatethickness is 2 nm. N D = N S =1 × 10 20 cm − 3 , N G =1 × 10 19 cm − 3 .In this study,simulator Atlas Silvaco device is usedforsimulation. In this paper, the influence ofthe number ofgate metals on theDIBL, Ion, Ioff and threshold voltage been investigated.By increasing thenumber ofgate metals,DIBL and Ioff decreases,but Ion and threshold voltage increases.Therefore, if the number of gate metals is higher then transistor performance is better.
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