Abstract
We studied nitrogen profile engineering to make an ultra-thin silicon nitrided oxide (SiNO) film for 0.25 /spl mu/m dual-gate CMOS device applications. It was found that high concentration nitrogen atoms piled up near the polysilicon/dielectric interface in the SiNO film can effectively prevent boron diffusion from the p/sup +/ gate electrode into the dielectric film, and consequently more than 3 times charge-to-breakdown (Q/sub bd/) improvement can be achieved. The SiNO film enables surface channel PMOS and can reduce the minimum gate dielectric thickness by 1.5 nm.
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