Abstract
The impact of STI stress on mobility and resulted transconductance (gm) degradation appear as a penalty of multi-finger devices for RF and analog design. Donut device layout is proposed to eliminate the STI transverse stress and achieve higher gm. Both NMOS and PMOS can benefit from the donut layout, with higher cut-off frequency (fT). However, the layout dependence of gm and gate resistance (Rg) becomes a critical trade-off in determining high frequency performance other than fT, such as maximum oscillation frequency (fmax) and RF noise. In this paper, a comparison between multi-finger and donut MOSFETs in terms of fT, fmax, and NFmin can provide a useful guideline of device layout for RF design using nanoscale CMOS technology.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
