Abstract
Increasing electrification means the world will need a projected total of 1000 TW-units per year in the next 10 years+. A new generation of wide bandgap power electronics devices are potentially 100-1000 times faster and 100-1000 lower loss than today's technology. Current market projections of massive growth (30%+) for WBG technology and market size into the 10 s of mean that this is a vitally important technology that will shape the next several decades of the world. A key role of the International Technology Roadmap for Wide bandgap Power Semiconductors (ITRW) is to facilitate an acceleration in the R&D process for this new technology to fulfil its potential. This paper takes a holistic view of the future of wide bandgap power electronics, the challenges that needs to be addressed and how roadmaps can make a contribution to meeting these challenges.
Highlights
The International Technology Roadmap for Wide bandgap power semiconductors (ITRW) was published in 2019 by the IEEE power electronics society [1] with a view to identifying trends, directions and performance metrics for the future of power electronics technology based on the exciting new developments in wide bandgap semiconductors
This paper summarizes some of these discussions and provides an insight as to how this will be managed within the context of the power electronics community. in particular, the paper will focus on what the Impact of ITRW can be and investigate the question of how can wide bandgap power semiconductors break through globally?
There are a number of roadmaps in this area and while a comprehensive list is beyond the scope of this paper, there are a number of parallel efforts within the IEEE community, such as the The Electronic Packaging Society (EPS) Heterogeneous Integration Roadmap (HIR) covers a wide range of electronic applications, including integrated power electronics (IPE), as part of the system-in-package (SiP) solutions [20]
Summary
The International Technology Roadmap for Wide bandgap power semiconductors (ITRW) was published in 2019 by the IEEE power electronics society [1] with a view to identifying trends, directions and performance metrics for the future of power electronics technology based on the exciting new developments in wide bandgap semiconductors. The ITRW team was organized into core technology areas to focus on the immediate challenges facing the power electronics community with the emergence of these exciting new devices: Devices and Materials, SiC Applications, GaN Applications, Packaging and Integration. Each of these areas formed a working group to develop:. Since 2015 when the ITRW effort was launched, more than 5 years have elapsed, with some of the trends identified in that period [2] being achieved or surpassed The diversity of both technological development and the regional focus for specific applications has led to commercial and policy drivers resulting in major advances. This paper summarizes some of these discussions and provides an insight as to how this will be managed within the context of the power electronics community. in particular, the paper will focus on what the Impact of ITRW can be and investigate the question of how can wide bandgap power semiconductors break through globally?
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