Abstract
This paper describes the effects of water-related species contained in intermetal dielectric layers on the reliability of nonvolatile memory devices. Charge loss of the cells and hot-carrier (HC) lifetime degradation of peripheral N-channel MOSFETs due to the high temperature bake test are accelerated by the water-related species in the intermetal dielectric layer. The relation between the charge loss and the HC-lifetime degradation and the mechanism involved are discussed. Appropriate dielectric structures to minimize such degradation have been proposed for nonvolatile memory devices with double-metal structure and scaled narrow first metal gaps.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
