Abstract
A robust opto-electronic device simulation tool is extended to model the phonon bottleneck in edge-emitting 1.3µm InGaAsN double quantum well (QW) laser diodes. Both the steady state operation and the transient response of the phonon bottleneck are examined as a function of injection current and heatsink temperature. It is found that the hot phonon population can raise the electron and hole temperatures in the QW active region by up to 7K above the equilibrium lattice temperature at moderate injection currents. At high injection currents, it is found that the phonon bottleneck can significantly decrease the optical power.
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