Abstract
Anomalies due to random displacement defect is investigated in a 5 nm nanosheet gate-all-around field effect transistor (NS-FET). Terrestrial cosmic radiation is known to cause silicon displacement in random location. In this work, the random displacement anomaly (RDA) is investigated in NS-FET with the aid of technology computer aided design (TCAD). The fluctuation due to RDA is considered as a variable and its impact on the electrical characteristics is investigated for various width and thickness values of the NS-FET. The contribution to the RDA in individual NS layers is studied. The worst degradation rate of drain current is almost 20% while RDA is located at center of top layer in NS-FET.
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