Abstract
We demonstrate that modeling bulk traps and passivation/barrier interface traps in AlGaN/GaN HEMT is necessary to reproduce experimentally observed device behavior. Comparative modeling analysis of different leakage mechanisms in vertical p-n diode with a threading dislocation shows that variable range hopping is the dominant leakage mechanism there. The 3D quantum transport analysis of the impact of threading dislocations on electron mobility for sheet-like and nanowire-like GaN and Si MOSFET channels suggests considerable nanosheet variability and super-sensitive nanowire response. The analysis of voids in electrochemically induced pitting characterizes the impact of different pit types on different key metrics of transistor performance.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
