Abstract
The impact of chemical ordering on the dielectric properties of the thin film relaxor Pb(Sc1∕2Ta1∕2)O3 (PST) was investigated. It was found that the dielectric permittivity increased with increased B site order, directly opposite the behavior observed in ceramics. Highly ordered PST thin films on sapphire substrates were found to behave as conventional ferroelectrics with dielectric permittivities near 7000 and well developed polarization hysteresis loops below the phase transition temperature. In contrast, disordered thin films were found to exhibit relaxor behavior with the thin film permittivity reduced by an order of magnitude as compared to ceramic specimens. The direct experimental evidence of highly ordered films and ceramics possessing similar properties under similar processing conditions points to intrinsic differences in the thin film relaxor state as compared to the ceramic relaxor state. It is proposed that the low processing temperatures employed in thin film fabrication do not provide sufficient energy to achieve the same state of “disorder” which is found in ceramic specimens sintered at high temperatures.
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