Abstract
This paper presents the effects of p-type body doping concentration on a symmetric double-gate MOSFET with 9 nm gate length, using full quantum simulation. The simulations are based on a self-consistent solution of the 2D Poisson equation and Schrodinger equation with open boundary conditions, within the non-equilibrium Green's function formalism for a wide range of channel doping concentrations. The effects of varying the p-type body doping concentration parameter is investigated in terms of the drain current, potential energy profile, 2D electron density, on-off current ratio, subthreshold swing, drain induced barrier lowering, transconductance, drain conductance, voltage gain, and resistance. The simulation results show that a higher body doping improves the short channel effects.
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