Abstract
In order to improve the charge collection efficiency of EBCMOS, we predicted and experimentally confirmed the doping structure of the electron multiplication layer. In this study, we simulate the charge collection efficiency of EBCMOS using various doping strategies by modeling the collisional scattering of electrons with solid atoms in semiconductor materials and combining the travel paths of electrons in the electron multiplication layer. The simulation findings demonstrate that the electric field distribution in EBCMOS could be optimized by using a layered doping structure to decrease the thickness of the index strongly doped layer. The enhanced doping structure directly contributes to the enhanced charge collecting efficiency. Based on the results of the simulations, doped samples were created and evaluated. The charge collection efficiency of EBCMOS devices might be significantly increased by decreasing the thickness of the index highly doped layer to 0.1 μm, reaching 86.27%. The testing was done on a 7 μm thick P-type silicon substrate with a 1 μm thick index highly doped layer.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.