Abstract
The dry etching technology is one of the key process in the 3C-SiC MEMS fabrication. In this paper, the 3C-SiC ICP etching technology will be studied. The etching gas components we used include CHF3, SF6 and O2. The polycrystal 3C-SiC films deposited on SiO2 layer were etched in different condition. The effects of the key process parameters such as the etching gas component, the gas flow, the source power, the bias power and the etching pressure on the etch characteristics are studied detailedly. According to the results, the optimal process was obtained. Finally, we used the optimal ICP etching process to fabricate resonator successfully. The work is important and useful to fabricate the 3C-SiC MEMS devices.
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