Abstract
The hydrostatic pressure dependence of the band gap of a GaInAs epilayer has been measured by photoluminescence in a diamond anvil cell at room temperature and 80 K. The initial pressure coefficient of the band-gap is found within experimental error to be independent of temperature with a value of 10.95 ± 0.1 meV kbar -1. The dependence of the band gap on lattice constant is found to be linear, described by a deformation potential of -8.25 ± 0.1 eV for a bulk modulus of 760kbar.
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