Abstract
We investigated the simultaneous effects of the hydrostatic pressure and magnetic field on the diamagnetic susceptibility of shallow donor confined to move in GaAs/Ga1−xAlxAs Structure. The Hass variational method within the effective mass approximation used as the framework. We describe the quantum confinement by a finite barrier deep potential. The diamagnetic susceptibility computed as a function of the hydrostatic pressure, box size and the magnetic field intensity. Our results show that the absolute value of the diamagnetic susceptibility decreases with increasing hydrostatic pressure or magnetic field intensity. It effects is more pronounced for large Quantum Box. Hydrostatic pressure and magnetic field introduce an additional confinement on the donor inside the Quantum Box. Which can be used in semiconductors design.
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