Abstract
An investigation was made of a batch of samples of neutron transmutation-doped (NTD) Ge:Ga with the degree of compensation K=0.3 and the concentration of the main impurity (Ga) from N=3.6 · 1014cm−3 to Nc=2.5 · 1017cm−3, corresponding to the MI transition. The following were studied: the parameters of NTD Ge:Ga, the temperature dependence of hopping transport, the ɛ3 region of the nearest neighbor hopping (NNH), the saturation of NNH, variable range hopping (VRH) and the Coulomb gap.
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