Abstract
The high temperature defect equilibria and self-compensation behavior of ZnTe were investigated by measuring the high temperature electrical transport properties under equilibrium conditions of Al-doped single crystals. The conductivity type was changed from p-type to low resistivity n-type between 700 and 925°C in Zn-rich atmospheres by the addition of 6 × 10 18 cm −3 Al donors. A two-carrier treatment of the transport measurements yields nαP +0·4 Zn. It is proposed that the impurity donors are compensated by doubly ionized native acceptors.
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