Abstract
The nanorod Pd/WO3/SiC/Si p-i-n diode prepared on p+ type (100) Si substrate for carbon monoxide (CO) sensing applications was studied. The SiC material was used to enhance operating temperature, and the nanorod structure was designed to improve sensing performance of the device. The developed p-i-n diode exhibited a high relative response ratio of ~445% to 100 ppm CO ambient under condition of 300oC and -3V bias. The response ratio was better than the reported WO3 based resistive type CO sensors of 15 % and 8 %, respectively on Si and Al2O3 substrates. Thus, the Pd/WO3/SiC/Si p-i-n diode had the potential to develop a low cost high performance CO sensor.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
