Abstract
A high density plasma produced by a microwave discharge (2.45 GHz) utilizing a spokewise antenna is applied for the large-scaled deposition of hydrogenated microcrystalline silicon (μc-Si:H) film. The plasma maintains a uniform state within ±6% over a diameter of 16 cm. The high density plasma, > 10 11 cm −3 has been sustained with low electron temperatures of 2–2.5 eV in Ar low pressure plasma of several mTorr without magnetic fields. Highly crystallized and photoconductive μc-Si:H(Cl) film is produced by adding small addition of SiH 4 under steady flow of dichlorosilane (SiH 2Cl 2), H 2 and Ar plasma at high deposition rate of about 20 Å/s.
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