Abstract

In this study, B-doped g-C3N4 nanosheets (BCN) were prepared using a thermal-oxidative etching method, resulting in a semiconductor with a large specific surface area. The B-doping enhances the light absorption of graphitic carbon nitride(g-C3N4) and improves the photogenerated carrier lifetime. The optimal B-containing amount resuled in a hydrogen production rate of 1297 μmol g−1 h−1 for g-C3N4 nanosheets. Furthermore, zeolitic imidazolate framework (ZIF)67/BCN heterostructures were successfully obtained through simple mechanical grinding approaches. The BCN provided abundant active sites and contributed to excellent encapsulation on the surface of ZIF67. The obtained ZIF67/BCN photocatalyst displayed an H2 evolution rate of 3392 μmol g−1 h−1, attributed to forming type-II heterojunctions between ZIF67 and BCN. Moreover, the BCN exhibited a higher conduction band (CB) potential with ZIF67 than CN, resulting in more efficient light-driven charge separation between ZIF67 and BCN and enhanced photocatalytic performance. This work provides a meaningful reference for improving the activity of g-C3N4 photocatalysts.

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