Abstract
The crisis in a FC-72 liquid film moving under the action of a gas flow through a smooth heater was experimentally investigated. It is shown that with gas and liquid flow rates increases a critical heat flux is growth.
Highlights
The rapid development of semiconductor technologies, including the reduction in the size of the transistor, that is, increasing their density, leads to higher heat fluxes and dissipated power from the chip surface
The critical heat flux is measured and shown, the liquid film moving under the action of the gas flow is up to five times more efficient than the flowing fluid film
The development of crisis phenomena during the flow of a FC-72 film liquid under the action of a nitrogen gas flow is studding in details
Summary
The rapid development of semiconductor technologies, including the reduction in the size of the transistor, that is, increasing their density, leads to higher heat fluxes and dissipated power from the chip surface. A comparison between the flowing fluid film and the liquid film moving under the action of the gas flow is shown in [12,13]. The critical heat flux is measured and shown, the liquid film moving under the action of the gas flow is up to five times more efficient than the flowing fluid film. It was found in the number of papers that the thermocapillary foresees play a crucial role in shear driven cooling systems of microelectronic devices [14 - 16]
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