The haustorial interface in a resistant interaction of Erysiphe pisi with Pisum sativum

Abstract

The interface between Erysiphe pisi and pea cv. JI 1049 was studied at the ultrastructural and cytochemical levels and compared with those in two susceptible cultivars. Haustorial efficiencies, as indexed by the length of mycelium associated with each haustorium, and growth rates on the resistant and one susceptible cultivar were also compared. The interaction in the resistant cultivar differed from those in the susceptible cultivars in the following ways: (i) there was no contact between the host plasmalemma and the A neckband region; (ii) papillae were contiguous with the surface of the neck and thus were probably formed before haustoria and (iii) there appeared to be less polysaccharide in the extrahaustorial membrane. The extrahaustorial membrane in the resistant cultivar lacked ATPase activity, whereas the rest of the host plasmamembrane had normal activity. Each haustorium supported a significantly greater total hyphal length in the resistant than in the susceptible cultivars. Growth rates of superficial hyphae were very similar on the susceptible and resistant cultivars but there was a delay in the onset on hyphal growth on the resistant cultivar which correlated with the previously reported delay in formation of the first haustorium. In contrast to hyphal growth rates, the rate of haustorium production was significantly less in the resistant cultivar. It is proposed that resistance in cv. JI 1049 operates at the stages prior to haustorium formation, similarly to that in some non-host and partial resistance systems. Once formed, however, the function of the haustorium seems to be unimpaired, despite the observed interfacial differences.