Abstract
Spin density distribution in the GaAs/AlGaAs heterostructure was studied under steady-state optical orientation conditions. A comprehensive analysis of the dynamics and relaxation processes responsible for the steady-state nonuniformity of spin orientation was made. The acceptor impurity concentrations in various regions of nonuniformly doped gallium arsenide were determined. The concentrations were derived from the spin relaxation times measured using the optical orientation method.
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