The hall mobility of charge carriers at room temperature in InSb thin films regrown from the melt

Abstract

The experimental and theoretical dependence of the magnetoresistivity on magnetic field strength at room temperature in intrinsic and electrically homogeneous melt-grown InSb thin films was investigated. The electron mobility and the heavy and light hole mobilities were determined by fitting the calculated curves to the experimental points. On taking into account the similarities in the electrical and galvanomagnetic properties of InSb thin films and of uniaxially compressed InSb crystals it was concluded that the main scattering centres in the InSb films are ionized vacancies and interstitials in approximately equal numbers. The density of these point defects increases in films thinner than 3 μm.