Abstract
The Hall effect in Ni0.8Co0.2-SiO2 granular films which were fabricated by ion beam sputtering technique was studied. The saturated Hall resistivity reached 6.3μΩ·cm in an applied field of 9.5×105 A/m at room temperature when NiCo volume fraction x is near the metal-insulator transition threshold. The temperature dependence of resistivity in these samples with different NiCo compositions was also investigated. It showed-lg T dependence in low x samples, which gradually showed metallic as x increased. Transmission electron microscopy and vibrating sample magnetometer were used to study the microstructures and magnetic properties, the dependence of transport properties on microstructure was also discussed.
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