The Hall current effect of magnetic-optical-elastic-thermal-diffusive semiconductor model during electrons-holes excitation processes

Abstract

In this work, a theoretical electrons and holes interaction model in semiconductors is studied. This mathematical-physical model is described during an optical-elastic-thermal-diffusion (OETD) process when the medium is excited by photo-energy due to high temperatures. The effect of the Hall current associated with the fall of a strong magnetic field on the outer surface of the semiconductor medium is studied. The density of magnetic flux due to the magnetic field causes a Hall effect. The governing equations are taken into one dimensional (1D) in the context of electronics-thermal-elastic deformation. To illustrate that the Laplace transform with initial conditions of the dimensionless main physical fields is used. The general linear solutions for the charge carrier holes and electrons, strain, and thermal distributions are obtained mathematically in the Laplace domain. Some thermal, mechanical, and optical conditions are taken at the free surface of the semiconductor with the Laplace inverse approximate technique numerically to obtain the complete solutions of the main physical fields in the time domain. The Hall current effect and influence of thermal relaxation times according to photo-thermoelasticity theory are presented graphically and discussed for silicon material.