The growth rate of Cd xHg 1−xTe grown by metalorganic chemical vapor deposition

Abstract

Cd xHg 1−xTe epitaxial layers have been grown by metalorganic chemical vapor deposition on CdTe substrates oriented 0°–4° off (100) toward <01 1 >, using dimethylcadmium (DMCd), diisopropyltelluride (DIPTe), and elemental mercury (Hg). Typically the Cd xHg 1−xTe layers exhibited hillock densities of (1.5-3.0)×10 2 cm -2, and FWHM in XRD of 130–180 arc sec. We have examined the growth rate and the compositional ratio x, and their dependences on the flow rates of DIPTe and DMCd. By considering the growth mechanism in the light of these results, it is concluded that the growth involves the formation of an adduct.