Abstract
The growth of vapor-deposited Zn overlayers on Cu(111) has been investigated with thermal-programmed desorption (TPD) and X-ray photoelectron spectroscopy (XPS). The attenuation of the Cu(2p) photoemission peak and the growth of the Zn(2p) photoemission peak are analyzed. The analysis shows that the first two Zn layers are distributed uniformly across the surface. Addition of more Zn gives rise to growth of Zn islands on top of the two Zn layers. A Habenschaden-Küppers analysis of the TPD spectra shows a strong decrease in the heat of adsorption in the first two Zn layers. When the Zn island formation begins, the heat of adsorption is shown to be almost constant. Evaporation of Zn in an oxygen pressure of 2.7×10 −4 Pa results in formation of ZnO x islands. Further deposition of Zn forms Zn islands similar to the evolution of the Zn/Cu(111) interface.
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