Abstract
We report for the first time the epitaxial growth of single crystalline thin films of bismuth gallate 12 Bi 2O 3 : 1 Ga 2O 3 and bismuth titanate, 6 Bi 2O 3 : 1 TiO 2. The growth process takes advantage of the difference in the melting points between bismuth germanate, Bi 12GeO 20, the substrate, and that of several lower melting isostructural bismuth compounds as the film material. Liquid phase epitaxial growth via dipping can be made directly in melts of the desired film composition and requires no additional fluxes to effect solubility. The indices of refraction of the films can be made greater than that of the substrate, thus the waveguiding characteristics of the films can be combined with their acoustooptic, electrooptic and nonlinear optic properties. Waveguiding thin films of bismuth gallate and bismuth titanate have been deposited on bismuth germanate substrates in thicknesses ranging up to 100 μm and at growth rates in the order of 1–2 μm/min. These epitaxial layers appear to possess excellent waveguiding characteristics. Using a rutile prism-film coupler, waveguide modes have been observed at 0.6328, 0.5145 and 0.4880 μm laser wavelengths.
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