Abstract
The growth of silicon tubes by the EFG technique is reported. Tubes were grown with a diameter of 0.95 cm, wall thickness in the range of 0.005 to 0.1 cm at rates up to 12 cm/min. The theory of tube growth by the EFG process is developed to show the dependence of tube wall thickness on the growth variables. Experimental apparatus and procedure are described as well as the application of the theory in controlling the wall thickness of the growing crystal. The experimental and theoretical results are combined to form a predictive model for wall thickness yield.
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