Abstract
ABSTRACTWe have grown films of silicon oxide by remote Plasma Enhanced CVD (remote PECVD). By changing the fraction of O3 in a plasma excited O3/He mixture that is mixed with a fixed flow of SiH4 diluted with Ar, we can deposit films which are either Si-rich, stoichiometric or Si-deficient. These changes are accompanined by differences in the incorporation of bonded hydrogen which occurs in SiH groups in Si-rich films and SiOH groups in Si-deficient films.
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