The growth of SiC on Si substrates with C 2H 4 and Si 2H 6

Abstract

SiC was grown on Si (100) substrates oriented and off-oriented by 2–5° towards [011] with simultaneous supply of C 2H 4 and Si 2H 6 at 1050°C. SiC formed during removal of oxide could be removed at 1150°C. Twinned growth occurred on both oriented and off-oriented substrates during carbonization, but fewer twins formed on the off-oriented substrate than that on the oriented substrate. In SiC growth process, twinned growth continued on the off-oriented substrate whereas twinned growth stopped and single crystal SiC with double-domain (2×1) superstructure formed on the oriented substrate. SiC single crystal could grow on a carbonized twinned buffer layer. Obvious SiC LO and TO phonon modes were observed with Raman spectroscopy in the epilayer grown on the oriented substrate. The surface of the epilayer grown on the oriented substrate was smooth, while there was a high density of islands on the epilayer grown on the off-oriented substrate. The film grown on the oriented substrate is superior than that grown on the off-oriented substrate.