Abstract
Experimental conditions are described for growing crystals of diamond lattice and zinc blende semiconductors from metal solutions using the twin plane reentrant edge mechanism. In addition to the expected < 211 > type twinned platelets, some unusual < 110 > extended forms with intersecting twin configurations were obtained. Etch techniques were used to study microresistivity striations and to determine the growth history of the platelets. The relative number of nucleation events at different sites and the possible effect of polarity on the growth of III-V compound platelets are discussed. Electrical measurements are reported on some of the platelets.
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