The growth of InSb using triisopropylantimony or tertiarybutyldimethylantimony and trimethylindium

Abstract

The growth of InSb using triisopropylantimony (TIPSb) or tertiarybutyldimethylantimony (TBDMSb) and TMIn was investigated over a temperature range of 350 to 475°C. The growth rates of InSb using TMIn and either TIPSb or TBDMSb at temperatures ≤425°C were proportional to both the TMIn flow rate and the temperature. The surface morphology of InSb grown using either TIPSb or TBDMSb was very rough for growth temperatures ≤425°C. The InSb with the highest mobility was grown at 400°C and a 5/3 ratio of 3 using TIPSb. It was n-type with a carrier concentration of 2.5 × 10 15 cm -3 and a mobility of 78,160 cm 2/V·s at 77 K. Both n- and p-type InSb were grown using TBDMSb with mobilities up to 67,530 and 7773 cm 2/V·s, respectively at 77 K. The mobility for InSb using either TIPSb or TBDMSb was optimized by going to lower temperatures, pressures and 5/3 ratios. The opposite was true for surface morphology which improved with higher temperature, pressure, and 5/3 ratio. The growth of high mobility InSb with smooth surfacestat T ≤ 425° C was not achievable with TIPSb or TBDMSb and TMIn.