The growth of GaN on lithium gallate (LiGaO2) substrates for material integration

Abstract

Compliant substrates offer a new approach for strain management in semiconductors. Various implementations and processes for achieving substrate compliancy have been proposed and demonstrated. These include the use of twist-, glass-, and metal-bonds. A recent focus in our work has been on the growth of GaN on a novel and easily removable substrate—lithium gallate—for the ultimate regrowth on a bonded GaN template. The bonding technology is important to reduce thermal stresses during the regrowth step. Herein, we focus on the understanding of the growth of GaN on lithium gallate.