Abstract
A technique for achieving the growth of GaAs VPE layers with a highly abrupt doping profile is described. With this technique, the steepness of doping profile is remarkably improved and typical interface widths for the drop in carrier concentration from 1×1016 to 1×1015 cm−3 are 1000 Å. This technique also permits the growth of GaAs VPE layers with multistructure having a periodic Lo-Hi carrier concentration profile.
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