Abstract
The growth mode of m-plane AlN crystal grown by physical vapor transport method is studied. The m-plane AlN crystal fabricated by spontaneous nucleation was used as a seed to grow bulk crystal, and 3-mm thick AlN crystals with a maximum lateral dimension of 20 mm were obtained. The Raman tensor elements of A1(TO), E2(high) and E1(TO) Raman models from the m-plane AlN crystal are investigated by angle-dependent polarized Raman scattering. The Raman tensor comparing with our previous report indicates the possible enhancement of the Raman tensor in the directions vertical to [0002] direction at higher growth temperature.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
