Abstract
The growth mode of m-plane AlN crystal grown by physical vapor transport method is studied. The m-plane AlN crystal fabricated by spontaneous nucleation was used as a seed to grow bulk crystal, and 3-mm thick AlN crystals with a maximum lateral dimension of 20 mm were obtained. The Raman tensor elements of A1(TO), E2(high) and E1(TO) Raman models from the m-plane AlN crystal are investigated by angle-dependent polarized Raman scattering. The Raman tensor comparing with our previous report indicates the possible enhancement of the Raman tensor in the directions vertical to [0002] direction at higher growth temperature.
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