Abstract
The growth mechanism of SiC film produced by pyrolysis polyimide LB film was discussed. AES result showed that the atoms of C and Si form a gradient distribution in the pyrolyzed SiC films. Parameters including the diffusion co-efficiency of carbon atoms, growth rate of SiC film, and the activation energy were estimated. We suggest that the SiC formation process is controlled by the diffusion of silicon atoms, and the whole growth rate depends on the reaction of Si and C.
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