Abstract
Epitaxial layers of aluminium nitride have been grown on corundum substrates by vapour phase deposition, with aluminium chloride and ammonia as reactants. The structural perfection of the AIN material thus formed has been assessed using optical, X-ray diffraction and electron diffraction techniques. Although some oriented and unoriented polycrystalline deposits have been found, many highly oriented or single crystal layers have been produced. The two main epitaxial relationships developed are (2 1 1 0) A1N//(01 1 2) A1 2O 3 and (2 1 1 6) A1N//(01 1 2) A1 2O 3. The factors which govern the occurrence of these relationships are discussed. Measurements of the piezoelectric coupling of aluminium nitride on α-A1 2O 3 have been made and simple delay lines have been fabricated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
