The growth and morphology of epitaxial multilayer graphene

Abstract

The electronic properties of epitaxial graphene grown on SiC have shown its potential as aviable candidate for post-CMOS electronics. However, progress in this field requires adetailed understanding of both the structure and growth of epitaxial graphene. To thatend, this review will focus on the current state of epitaxial graphene research as it relatesto the structure of graphene grown on SiC. We pay particular attention to the similarityand differences between graphene growth on the two polar faces, (0001) and , of hexagonal SiC. Growth techniques, subsequent morphology and the structure of thegraphene/SiC interface and graphene stacking order are reviewed and discussed. Wherepossible the relationship between film morphology and electronic properties will also bereviewed.