Abstract
The electronic properties of epitaxial graphene grown on SiC have shown its potential as aviable candidate for post-CMOS electronics. However, progress in this field requires adetailed understanding of both the structure and growth of epitaxial graphene. To thatend, this review will focus on the current state of epitaxial graphene research as it relatesto the structure of graphene grown on SiC. We pay particular attention to the similarityand differences between graphene growth on the two polar faces, (0001) and , of hexagonal SiC. Growth techniques, subsequent morphology and the structure of thegraphene/SiC interface and graphene stacking order are reviewed and discussed. Wherepossible the relationship between film morphology and electronic properties will also bereviewed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
