Abstract
Single crystal platelets of Cd3As2 having carrier concentrations less than 1024 m−3 have been grown from the vapour in the presence of argon gas and excess cadmium vapour. It is shown that the resistivity and Hall data is consistent with a band model in which there is a direct band-gap atk=0 of approximately 0.38 eV and an indirect zero band-gap. It is suggested that the large electron carrier concentrations usually present in Cd3As2 result from anti-structure disorder.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
