Abstract
Ferroelectric (Bi3.25La0.75)Ti3O12 (BLT) thin films were prepared on SiO2/Si (100) and yttria-stabilized zirconia (YSZ) buffered SiO2/Si (100) substrates by pulsed laser deposition (PLD) method for metal-ferroelectric-insulator-semiconductor (MFIS) structure. BLT films had polycrystalline nature with the crystallization behavior sensitively influenced by the substrate temperature. Transmission electron microscopy (TEM) and Auger electron spectroscopy (AES) revealed that there was no inter-diffusion at the interface of the BLT thin films grown at as low as 620°C. Memory window of BLT films is about 0.8V at sweep voltage of 5V. The above results show that BLT thin films can be applied to the MFIS structure as a ferroelectric layer.
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